From missiles to VCRs, a scintillating change is foreseen, At a smart new breed of semiconductors enter the realm of electronics
RESEARCHERS report that discovery of an
unique chemical process could lead to
the development of new semiconduc-
tors and revolutionise the future of
commercial computers.
Scientist at the Research &
Technology Department of the us Naval
surface Warfare Centre in White Oak,
GerA have found a new way to
quality insulator films on
arsenide semiconductors - a
previously thought to be
Responsible.
"This new discovery has the potential to change any kind of electronics,
MiMiles to VCRs (video cassette
says physicist Francisco
a member of the research
&a dwovered the new process,
bbq in the electronics industry
that exist today based on silicon, can
now be based on gallium arsenide and
run 10 times faster.
According to researchers, gallium
Arsenide is intrisinically a better semiconducter than silicon, which is used in
all electronics devices. For
WWctrons travel at a higher
Miosoa arsenide than they do
MMMM Img the development
Of higher performance systems in such
as a high speed computing and
microwave communication.
What enables people to make (elec-
Tronic) devices on is the insulator
Silicon dioxide - which grows rain -
Ommil physicist Tak-Kin
Ober of the pioneering
Mod n*,, no good
M dam to grow on
perlect candidate
a efficient transis
I the White Oak
chemical inter
anierkide and an insulting later structured
ared of barium bromide there appeared
no way to realize its full potential.
There reaction would found, allows the making of an insulating layer on gallium arsenide this year in turn, enables thefabrication of electronic devices on gal-
lium arsenide. This is the break-
through," Santiago said. "Just by changing the material, you can create a new
generation of very fast computers," he
added.
The new process involves a mampulation of the surface chemical reaction
that takes place between gallium
arsenide and the barium fluoride molecules. Since the reaction occurs on the
surface only, it does not affect the
intrinsic properties of gallium arsenide.
According to Santiago, there have been
several attempts made in the past to
grow insulating films on gallium
arsenide, but all have faded.
The researchers explained that when
the barium fluoride molecule hits the
gallium arsenide surface, it is broken up
into its elements, barium and fluorine.
While the fluorine escapes as a gas, the
barium atom reacts with the gallium
arsenide to form a new compound that
serves as the glue to bind subsequent
barium fluoride atoms to the gallium
arsenide surface.
"And the barium fluoride layer has
been shown to have very good insulating properties, probably better than the
silicon dioxide on the silicon wafer,"
Santiago said. But be commented
that more work has to be done
before the new process could beput into
commercial use.
"We need to show the actual potential of this technology by making a transistor, using the barium fluoride as the
gate insulator," he said, adding, "This
will be our real test. We may find out
that some of the properties that give us
this insulating film may kill the transistor." And then, he added further with
some caution, "But so far, so good. We
are excited because we haven't seen any
results that are disappointing."
Notwithstanding all these advancemerits, the influence of the "atomic
glue" on the movement of electrons
still has to be investigated, feel
researchers. They emphasized that
commercial use of gallium arsenide
circuitry is not expected for at least
five years. It is also unlikely that
gallium arsenide will replace silicon
completely since ultra high speed is
not required for many commercial
applications.
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